EUV lithography for next generation IC manufacturing

Sometime around 2005 to 2007, optical pattern transfer lithography for integrated semiconductor manufacturing is expected to reach its technical and economic limits below 70 nanometers (nm). The favourite technique to take over from optical lithography is Extreme Ultra Violet (EUV) lithography.

The EUCLIDES project is working to overcoming obstacles to building EUV lithography tools. The project plan is to lay the foundations for EUV exposure tools which ultimately offer a resolution down to 30 nm, a throughput of greater than forty 300 mm wafers an hour, a CD control of 3 nm and an overlay budget of 10 nm (both 3 sigma).

EUV works at a much shorter exposure wavelength (about 13 nm) than for example Deep Ultra Violet (DUV) lithography (248 and 193 nm at present). Therefore radiation will not pass through the reticle and illumination and projection lenses onto the wafer, as there is almost no refraction and too much absorption loss and radiation damage. The solution is to use aspheric reflecting mirrors and also reflecting reticle both with reflecting multi-layer coatings. This puts unprecedented accuracy requirements onto mirror and reticle fabrication to ensure correct imaging.

Visitors to the EUCLIDES stand can examine an aspheric ceramic mirror substrate from a multi-mirror x-ray space telescope - an example of how findings from other areas such as satellite telescopes in space can be applied to the microelectronics arena.

Contact Markus WIEDERSPAHN, Carl Zeiss
tel +49 7364/20-2194
fax +49 7364/20-3370
email wiederspahn@zeiss.de
Website www.zeiss.de

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